Discrete Semiconductor Products

SUM120N04-1M7L-GE3

Obsolete

MOSFET N-CH 40V 120A TO263

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 40V 120A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SUM120N04-1M7L-GE3

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	285 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	11685 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs	17 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Power Dissipation (Max) [Max]	Vgs (Max)	Package / Case	Technology	FET Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SUM120N04-1M7L-GE3	375 W	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	N-Channel	285 nC	-55 °C	175 ░C	4.5 V 10 V	Surface Mount	2.5 V	17 mOhm	11685 pF	TO-263 (D2PAK)	120 A	40 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 40 V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources