Discrete Semiconductor Products

TSM170N06CH C5G

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MOSFET N-CHANNEL 60V 38A TO251

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Discrete Semiconductor Products

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MOSFET N-CHANNEL 60V 38A TO251

Technical Specifications

Parameters and characteristics for this part

Specification	TSM170N06CH C5G

Current - Continuous Drain (Id) @ 25°C	38 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	28.5 nC
Input Capacitance (Ciss) (Max) @ Vds	900 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK, TO-251-3 Stub Leads, IPAK
Power Dissipation (Max)	46 W
Rds On (Max) @ Id, Vgs	17 mOhm
Supplier Device Package	IPAK
Supplier Device Package	TO-251, TO-251S (IPAK SL)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Supplier Device Package	Supplier Device Package	Package / Case	FET Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Taiwan Semiconductor Corporation TSM170N06CH C5G	IPAK	TO-251 TO-251S (IPAK SL)	IPAK TO-251-3 Short Leads TO-251-3 Stub Leads IPAK TO-251AA	N-Channel	38 A	4.5 V 10 V	60 V	46 W	20 V	MOSFET (Metal Oxide)	900 pF	2.5 V	150 °C	-55 °C	17 mOhm	Through Hole	28.5 nC
Taiwan Semiconductor Corporation TSM170N06CP ROG		TO-252 (DPAK)	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	38 A	4.5 V 10 V	60 V	46 W	20 V	MOSFET (Metal Oxide)	900 pF	2.5 V	150 °C	-55 °C	17 mOhm	Surface Mount	28.5 nC
Taiwan Semiconductor Corporation TSM170N06CH	IPAK	TO-251	IPAK TO-251-3 Short Leads TO-251AA	N-Channel	38 A	4.5 V 10 V	60 V	46 W	20 V	MOSFET (Metal Oxide)	900 pF	2.5 V	150 °C	-55 °C	17 mOhm	Through Hole		15 nC
Taiwan Semiconductor Corporation TSM170N06PQ56 RLG		8-PDFN (5x6)	8-PowerTDFN	N-Channel	44 A	4.5 V 10 V	60 V		20 V	MOSFET (Metal Oxide)		2.5 V	150 °C	-55 °C	17 mOhm	Surface Mount		29 nC	73.5 W	1556 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 38A (Tc) 46W (Tc) Through Hole TO-251 (IPAK)

Technical documentation and resources