Discrete Semiconductor Products

BC337-16 TIN/LEAD

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BIPOLAR TRANSISTORS - BJT NPN 50VCBO 45VCEO 5.0VEBO 800MA 625MW

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Discrete Semiconductor Products

Active

BIPOLAR TRANSISTORS - BJT NPN 50VCBO 45VCEO 5.0VEBO 800MA 625MW

Technical Specifications

Parameters and characteristics for this part

Specification	BC337-16 TIN/LEAD

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	700 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	45 V

Part	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Package / Case	Package / Case	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]
Central Semiconductor Corp BC337-16 TIN/LEAD	Through Hole	150 °C	-65 °C	625 mW	100	700 mV	100 nA	500 mA	TO-92-3	TO-226AA	TO-226-3 TO-92-3	PNP	45 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.62
Mouser	N/A	2500	$ 0.57

General part information

BIPOLAR TRANSISTORS - BJT NPN 50VCBO 45VCEO 5.0VEBO 800MA 625MW

Technical documentation and resources