Discrete Semiconductor Products

SPU30P06P

Obsolete

MOSFET P-CH 60V 30A TO251-3

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 60V 30A TO251-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPU30P06P

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	48 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1535 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	75 mOhm
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Vgs (Max)	Vgs(th) (Max) @ Id	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package
INFINEON SPU30P06P	125 W	75 mOhm	48 nC	Through Hole	P-Channel	30 A	175 °C	-55 °C	60 V	20 V	4 V	IPAK TO-251-3 Short Leads TO-251AA	MOSFET (Metal Oxide)	1535 pF	10 V	PG-TO251-3

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General part information

P-Channel 60 V 30A (Tc) 125W (Tc) Through Hole PG-TO251-3

Technical documentation and resources