Discrete Semiconductor Products

MJE3055-BP

Obsolete

TRANS NPN 60V 10A TO220AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN 60V 10A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	MJE3055-BP

DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20
Frequency - Transition	2 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power - Max [Max]	2 W
Supplier Device Package	TO-220AB
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.2 V
Voltage - Collector Emitter Breakdown (Max)	60 V

Part	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Transistor Type	Mounting Type	Package / Case	Supplier Device Package	Power - Max [Max]
Micro Commercial Components MJE3055-BP	60 V	-55 °C	150 °C	1.2 V	20	2 MHz	NPN	Through Hole	TO-220-3	TO-220AB	2 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 60 V 10 A 2MHz 2 W Through Hole TO-220AB

Technical documentation and resources

No documents available