Specification	SSM3K37FS,LF

Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.5 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	12 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-416, SC-75
Power Dissipation (Max)	100 mW
Rds On (Max) @ Id, Vgs	2.2 Ohm
Supplier Device Package	SSM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

SSM3K37 Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 0.2 A, 2.2 Ω@4.5V, SOT-883(CST3)

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Package / Case	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]
Toshiba Semiconductor and Storage SSM3K37FS,LF	MOSFET (Metal Oxide)	12 pF	SSM	Surface Mount	2.2 Ohm	1 V	20 V	150 °C	100 mW	1.5 V 4.5 V	10 V	SC-75 SOT-416	N-Channel	200 mA
Toshiba Semiconductor and Storage SSM3K37CT,L3F	MOSFET (Metal Oxide)	12 pF	CST3	Surface Mount	2.2 Ohm	1 V	20 V	150 °C	100 mW	1.5 V 4.5 V	10 V	SC-101 SOT-883	N-Channel	200 mA
Toshiba Semiconductor and Storage SSM3K37MFV,L3F	MOSFET (Metal Oxide)	12 pF	VESM	Surface Mount	2.2 Ohm	1 V	20 V	150 °C		1.5 V 4.5 V	10 V	SOT-723	N-Channel	250 mA	150 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 0.2 A, 2.2 Ω@4.5V, SOT-883(CST3)

Technical documentation and resources