Specification	MJD31CJ

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	25
Frequency - Transition	3 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power - Max [Max]	1.6 W
Supplier Device Package	DPAK
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

MJD31C Series

100 V, 3 A NPN high power bipolar transistor

Part	Power - Max [Max]	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Mounting Type	Transistor Type	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature
Nexperia USA Inc. MJD31CJ	1.6 W	3 MHz	100 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	NPN	3 A	DPAK	1.2 V	1 µA	25	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2869	$ 0.84

General part information

NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.

Technical documentation and resources