Discrete Semiconductor Products

1A3-AP

Obsolete

DIODE GEN PURP 200V 1A R-1

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 200V 1A R-1

Technical Specifications

Parameters and characteristics for this part

Specification	1A3-AP

Capacitance @ Vr, F	15 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 ÁA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	R-1, Axial
Speed [Min]	200 mA, 500 ns
Supplier Device Package	R-1
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Current - Reverse Leakage @ Vr	Package / Case	Capacitance @ Vr, F	Technology	Mounting Type	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Speed [Min]	Voltage - DC Reverse (Vr) (Max) [Max]
MCC (Micro Commercial Components) 1A3-AP	5 ÁA	R-1 Axial	15 pF	Standard	Through Hole	-55 °C	150 °C	1 A	1.1 V	R-1	200 mA 500 ns	200 V
MCC (Micro Commercial Components) 1A3-AP	5 ÁA	R-1 Axial	15 pF	Standard	Through Hole	-55 °C	150 °C	1 A	1.1 V	R-1	200 mA 500 ns	200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 200 V 1A Through Hole R-1

Technical documentation and resources