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2ED2184S06FXUMA1
Integrated Circuits (ICs)

2ED2184S06FXUMA1

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INFINEON

THE 2ED2184S06F IS A 650 V 2.5 A HALF-BRIDGE HIGH CURRENT AND HIGH SPEED MOSFET AND IGBT GATE DRIVER IN DSO-8 PACKAGE

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2ED2184S06FXUMA1
Integrated Circuits (ICs)

2ED2184S06FXUMA1

Active
INFINEON

THE 2ED2184S06F IS A 650 V 2.5 A HALF-BRIDGE HIGH CURRENT AND HIGH SPEED MOSFET AND IGBT GATE DRIVER IN DSO-8 PACKAGE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

Specification2ED2184S06FXUMA1
Channel TypeSynchronous
Current - Peak Output (Source, Sink) [custom]2.5 A
Current - Peak Output (Source, Sink) [custom]2.5 A
Driven ConfigurationHalf-Bridge
Gate TypeN-Channel MOSFET, IGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]675 V
Input TypeNon-Inverting
Logic Voltage - VIL, VIH [custom]1.7 V
Logic Voltage - VIL, VIH [custom]1.1 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 °C
Package / Case0.154 in
Package / Case8-SOIC
Package / Case3.9 mm
Rise / Fall Time (Typ) [custom]15 ns
Rise / Fall Time (Typ) [custom]15 ns
Supplier Device PackagePG-DSO-8-69
Voltage - Supply [Max]20 V
Voltage - Supply [Min]10 VDC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.91
10$ 1.89
25$ 1.62
100$ 1.32
250$ 1.17
500$ 1.08
1000$ 1.01
Digi-Reel® 1$ 2.91
10$ 1.89
25$ 1.62
100$ 1.32
250$ 1.17
500$ 1.08
1000$ 1.01
N/A 5132$ 1.83
Tape & Reel (TR) 2500$ 0.93
5000$ 0.88
7500$ 0.85

Description

General part information

2ED2184 Series

650 Vhalf-bridgehigh current, and high speed gate driver forMOSFETandIGBT,with typical 2.5 A sink and source current in DSO-8 package. The DSO-14 package version for bigger creepage is also available:2ED21844S06J. Based onInfineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.

Documents

Technical documentation and resources