Specification	CBS10S30,L3F

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	500 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Package / Case	2-SMD, No Lead
Speed	500 ns, 200 mA
Supplier Device Package	CST2B
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	20 V
Voltage - Forward (Vf) (Max) @ If	450 mV

CBS10S30 Series

Diodes, 20 V/1 A Schottky Barrier Diode, CST2B

Part	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Technology	Current - Average Rectified (Io)	Speed	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]
Toshiba Semiconductor and Storage CBS10S30,L3F	Surface Mount	450 mV	Schottky	1 A	200 mA 500 ns	CST2B	20 V	2-SMD No Lead	500 µA	125 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	5161	$ 0.36

General part information

Diodes, 20 V/1 A Schottky Barrier Diode, CST2B

Technical documentation and resources