
HMC606-SX
ActiveGAAS INGAP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHZ
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HMC606-SX
ActiveGAAS INGAP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHZ
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Technical Specifications
Parameters and characteristics for this part
| Specification | HMC606-SX |
|---|---|
| Current - Supply | 64 mA |
| Frequency [Max] | 18 GHz |
| Frequency [Min] | 2 GHz |
| Gain | 13 dBi |
| Mounting Type | Surface Mount |
| Noise Figure | 6.5 dB |
| P1dB | 13 dBm |
| Package / Case | Die |
| RF Type | Radar |
| Supplier Device Package | Die |
| Test Frequency [Max] | 18 GHz |
| Test Frequency [Min] | 12 GHz |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Tray | 2 | $ 250.42 | <3d |
| 4 | $ 241.40 | |||
| 6 | $ 236.36 | |||
| 10 | $ 230.27 | |||
| 14 | $ 226.41 | |||
| 20 | $ 222.43 | |||
Description
General part information
HMC606-Die Series
The HMC606 is a GaAs InGaP HBT MMIC Distributed Amplifier die which operates between 2 and 18 GHz. With an input signal of 12 GHz, the amplifier provides ultra low phase noise performance of -160 dBc/Hz at 10 kHz offset, representing a significant improvement over FET-based distributed amplifiers. The HMC606 provides 14 dB of small signal gain, +27 dBm output IP3 and +15 dBm of output power at 1 dB gain compression while requiring 64 mA from a +5V supply. The HMC606 amplifier I/Os are internally matched to 50 Ω facilitating easy integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 Ω test fixture connected via 0.025 mm (1mil) diameter wire bonds of minimal length 0.31 mm (12 mils).ApplicationsRadar, EW & ECMMicrowave RadioTest InstrumentationMilitary & SpaceFiber Optic Systems
Documents
Technical documentation and resources