Technical Specifications
Parameters and characteristics for this part
| Specification | BSC0403NSATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 70 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 8 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2100 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 125 W |
| Rds On (Max) @ Id, Vgs | 11 mOhm |
| Supplier Device Package | PG-TDSON-8-7 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 3.62 | |
| 10 | $ 2.37 | |||
| 100 | $ 1.65 | |||
| N/A | 244 | $ 3.49 | ||
Description
General part information
BSC0403 Series
OptiMOS™ PD power MOSFETis Infineon’s portfolio targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages. Click here to viewfull portfolio.
Documents
Technical documentation and resources