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16-VFQFN Exposed Pad
RF and Wireless

HMC373LP3ETR

Active
Analog Devices Inc./Maxim Integrated

GAAS PHEMT MMIC LOW NOISE AMPLIFIER W/ BYPASS MODE, 700 - 1000 MHZ

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16-VFQFN Exposed Pad
RF and Wireless

HMC373LP3ETR

Active
Analog Devices Inc./Maxim Integrated

GAAS PHEMT MMIC LOW NOISE AMPLIFIER W/ BYPASS MODE, 700 - 1000 MHZ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationHMC373LP3ETR
Current - Supply90 mA
Frequency [Max]1 GHz
Frequency [Min]700 MHz
Gain14 dBi
Mounting TypeSurface Mount
Noise Figure1 dB
P1dB21 dBm
RF TypeGSM, CDMA
Supplier Device Package16-LFCSP (3x3)
Test Frequency1 GHz

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyCut Tape (CT) 1$ 22.56<3d
10$ 19.68
25$ 18.67
100$ 17.30
250$ 16.48
Tape & Reel (TR) 500$ 15.90<3d

Description

General part information

HMC373 Series

The HMC373LP3 / HMC373LP3E are versatile, high dynamic range GaAs MMIC Low Noise Amplifiers that integrates a low loss LNA bypass mode on the IC. The amplifier is ideal for GSM & CDMA cellular basestation front-end receivers operating between 700 and 1000 MHz and provides 0.9 dB noise figure, 14 dB of gain and +35 dBm IP3 from a single supply of +5V @ 90 mA. Input and output return losses are 28 and 12 dB respectively with the LNA requiring minimal external components to optimize the RF input match, RF ground and DC bias. By presenting an open or short circuit to a single control line, the LNA can be switched into a low 2.0 dB loss bypass mode reducing the current consumption to 10 μA. For applications which require improved noise figure, please see the HMC668LP3(E).ApplicationsGSM, GPRS & EDGECDMA & W-CDMAPrivate Land Mobile Radio

Documents

Technical documentation and resources