Specification	MJD41C-QJ

Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30
Frequency - Transition	3 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power - Max [Max]	1.6 W
Qualification	AEC-Q101
Supplier Device Package	DPAK
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

MJD41C-Q Series

100 V, 6 A NPN high power bipolar transistor

Part	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Grade	Package / Case	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Supplier Device Package	Frequency - Transition	Qualification	Vce Saturation (Max) @ Ib, Ic	Transistor Type
Nexperia USA Inc. MJD41C-QJ	1.6 W	1 µA	Automotive	DPAK (2 Leads + Tab) SC-63 TO-252-3	150 °C	100 V	30	Surface Mount	DPAK	3 MHz	AEC-Q101	1.5 V	NPN

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	557	$ 1.04

General part information

NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.

Technical documentation and resources