Discrete Semiconductor Products

BCX71HE6327HTSA1

LTB

BIPOLAR TRANSISTORS - BJT PNP SILICON AF TRANSISTOR

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Discrete Semiconductor Products

LTB

BIPOLAR TRANSISTORS - BJT PNP SILICON AF TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	BCX71HE6327HTSA1

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	20 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	180
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	330 mW
Supplier Device Package	PG-SOT23
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	550 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	45 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature	Package / Case	Power - Max [Max]	Transistor Type
INFINEON BCX71HE6327HTSA1	180	20 nA	PG-SOT23	100 mA	250 MHz	Surface Mount	550 mV	45 V	150 °C	SC-59 SOT-23-3 TO-236-3	330 mW	PNP
INFINEON BCX71KE6327HTSA1	380	20 nA	PG-SOT23	100 mA	250 MHz	Surface Mount	550 mV	45 V	150 °C	SC-59 SOT-23-3 TO-236-3	330 mW	PNP
INFINEON BCX71GE6327HTSA1	120	20 nA	PG-SOT23	100 mA	250 MHz	Surface Mount	550 mV	45 V	150 °C	SC-59 SOT-23-3 TO-236-3	330 mW	PNP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 45 V 100 mA 250MHz 330 mW Surface Mount PG-SOT23

Technical documentation and resources