Discrete Semiconductor Products

BSZ0907NDXTMA2

Obsolete

MOSFET 2N-CH 30V 6.7A WISON-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 30V 6.7A WISON-8

Technical Specifications

Parameters and characteristics for this part

Specification	BSZ0907NDXTMA2

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	6.7 A, 8.5 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	4.5 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	7.9 nC, 6.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	900 pF
Input Capacitance (Ciss) (Max) @ Vds [Min]	730 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max	700 mW, 860 mW
Rds On (Max) @ Id, Vgs	9.5 mOhm, 7.2 mOhm
Supplier Device Package	PG-WISON-8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

Part	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Input Capacitance (Ciss) (Max) @ Vds [Min]	Mounting Type	Power - Max	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Configuration	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	FET Feature	FET Feature	Gate Charge (Qg) (Max) @ Vgs
INFINEON BSZ0907NDXTMA2	7.2 mOhm 9.5 mOhm	MOSFET (Metal Oxide)	900 pF	730 pF	Surface Mount	700 mW 860 mW	8-PowerVDFN	150 °C	-55 °C	6.7 A 8.5 A	2 N-Channel (Dual)	PG-WISON-8	30 V	2 V	4.5 V	Logic Level Gate	6.4 nC 7.9 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Mosfet Array 30V 6.7A (Ta), 8.5A (Ta) 700mW (Ta), 860mW (Ta) Surface Mount PG-WISON-8

Technical documentation and resources