Specification	1SS226,LF

Current - Average Rectified (Io) (per Diode)	100 mA
Current - Reverse Leakage @ Vr	500 nA
Diode Configuration	1 Pair Series Connection
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)	4 ns
Speed	200 mA
Speed	Any Speed
Supplier Device Package	S-Mini
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	80 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.2 V

1SS226 Series

Diodes, 80 V/0.1 A Switching diode, SOT-346(S-Mini)

Part	Supplier Device Package	Operating Temperature - Junction [Max]	Mounting Type	Voltage - Forward (Vf) (Max) @ If [Max]	Speed	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Diode Configuration	Reverse Recovery Time (trr)	Current - Average Rectified (Io) (per Diode)	Package / Case	Technology	Current - Reverse Leakage @ Vr
Toshiba Semiconductor and Storage 1SS226,LF	S-Mini	125 °C	Surface Mount	1.2 V	200 mA	Any Speed	80 V	1 Pair Series Connection	4 ns	100 mA	SC-59 SOT-23-3 TO-236-3	Standard	500 nA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diodes, 80 V/0.1 A Switching diode, SOT-346(S-Mini)

Technical documentation and resources