Discrete Semiconductor Products

1SS226,LF

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DIODE SWITCHING SI 85V 0.1A 3-PIN S-MINI T/R AUTOMOTIVE AEC-Q101

Discrete Semiconductor Products

Active

DIODE SWITCHING SI 85V 0.1A 3-PIN S-MINI T/R AUTOMOTIVE AEC-Q101

Technical Specifications

Parameters and characteristics for this part

Specification	1SS226,LF

Current - Average Rectified (Io) (per Diode)	100 mA
Current - Reverse Leakage	500 nA
Diode Configuration	Series Connection
Diode Pair Count	1 pair
Mounting Type	Surface Mount
Operating Temperature - Junction (Max)	125 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	S-Mini
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed, Small Signal
Speed - Fast Recovery (Maximum)	200 mA
Speed - Small Signal Current Max	200 mA, 200 mA, 200 mA
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	80 V
Voltage - Forward (Vf) (Max)	1.2 V

Diodes, 80 V/0.1 A Switching diode, SOT-346(S-Mini)

Part	Current - Reverse Leakage	Technology	Package / Case	Current - Average Rectified (Io) (per Diode)	Reverse Recovery Time (trr)	Diode Pair Count	Diode Configuration	Voltage - DC Reverse (Vr) (Max)	Speed - Small Signal Current Max	Speed	Speed - Fast Recovery (Maximum)	Voltage - Forward (Vf) (Max)	Mounting Type	Operating Temperature - Junction (Max)	Package Name
Toshiba Semiconductor and Storage 1SS226,LF	500 nA	Standard	SC-59 SOT-23-3 TO-236-3	100 mA	4 ns	1 pair	Series Connection	80 V	200 mA 200 mA 200 mA	Any Speed Small Signal	200 mA	1.2 V	Surface Mount	125 °C	S-Mini

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

Diodes, 80 V/0.1 A Switching diode, SOT-346(S-Mini)

Technical documentation and resources