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8-SOIC
Isolators

ADUM4121BRIZ

Active
Analog Devices Inc./Maxim Integrated

HIGH VOLTAGE, ISOLATED GATE DRIVER WITH INTERNAL MILLER CLAMP, 2 A OUTPUT WITH THERMAL SHUTDOWN

8-SOIC
Isolators

ADUM4121BRIZ

Active
Analog Devices Inc./Maxim Integrated

HIGH VOLTAGE, ISOLATED GATE DRIVER WITH INTERNAL MILLER CLAMP, 2 A OUTPUT WITH THERMAL SHUTDOWN

Technical Specifications

Parameters and characteristics for this part

SpecificationADUM4121BRIZ
Approval AgencyUR, VDE, CSA
Common Mode Transient Immunity (Min) [Min]150 kV/µs
Current - Peak Output2.3 A
Mounting TypeSurface Mount
Number of Channels [custom]1
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 C
Package / Case8-SOIC (0.295", 7.50mm Width)
Propagation Delay tpLH / tpHL (Max) [Max]53 ns, 42 ns
Pulse Width Distortion (Max) [Max]13 ns
Rise / Fall Time (Typ) [custom]18 ns
Rise / Fall Time (Typ) [custom]18 ns
Supplier Device Package8-SOIC-IC
TechnologyMagnetic Coupling
Voltage - Output Supply [Max]35 V
Voltage - Output Supply [Min]7.5 V

ADUM4121 Series

High Voltage, Isolated Gate Driver with Internal Miller Clamp, 2 A Output with Thermal Shutdown

PartNumber of Channels [custom]TechnologySupplier Device PackagePropagation Delay tpLH / tpHL (Max) [Max]Approval AgencyCurrent - Peak OutputVoltage - Output Supply [Min]Voltage - Output Supply [Max]Operating Temperature [Max]Operating Temperature [Min]Mounting TypeCommon Mode Transient Immunity (Min) [Min]Rise / Fall Time (Typ) [custom]Rise / Fall Time (Typ) [custom]Pulse Width Distortion (Max) [Max]Package / CaseSupplied ContentsTypeFunctionContentsUtilized IC / Part
8-SOIC
Analog Devices Inc./Maxim Integrated
1
Magnetic Coupling
8-SOIC-IC
42 ns
53 ns
CSA
UR
VDE
2.3 A
11.6 V
35 V
125 °C
-40 C
Surface Mount
150 kV/µs
18 ns
18 ns
13 ns
8-SOIC (0.295"
7.50mm Width)
EVAL-ADUM4121-1EBZ
Analog Devices Inc./Maxim Integrated
Board(s)
Power Management
Gate Driver
Board(s)
ADuM4121-1
8-SOIC
Analog Devices Inc./Maxim Integrated
1
Magnetic Coupling
8-SOIC-IC
42 ns
53 ns
CSA
UR
VDE
2.3 A
4.5 V
35 V
125 °C
-40 C
Surface Mount
150 kV/µs
18 ns
18 ns
13 ns
8-SOIC (0.295"
7.50mm Width)
EVAL-ADUM4121EBZ
Analog Devices Inc./Maxim Integrated
Board(s)
Power Management
Gate Driver
Board(s)
ADuM4121
8-SOIC
Analog Devices Inc./Maxim Integrated
1
Magnetic Coupling
8-SOIC-IC
42 ns
53 ns
CSA
UR
VDE
2.3 A
7.5 V
35 V
125 °C
-40 C
Surface Mount
150 kV/µs
18 ns
18 ns
13 ns
8-SOIC (0.295"
7.50mm Width)
8-SOIC
Analog Devices Inc./Maxim Integrated
1
Magnetic Coupling
8-SOIC-IC
42 ns
53 ns
CSA
UR
VDE
2.3 A
11.6 V
35 V
125 °C
-40 C
Surface Mount
150 kV/µs
18 ns
18 ns
13 ns
8-SOIC (0.295"
7.50mm Width)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTube 1$ 7.69<1d
10$ 5.95
80$ 5.10
160$ 4.91
320$ 4.75
560$ 4.65
1040$ 4.55

Description

General part information

ADUM4121 Series

The ADuM4121/ADuM4121-1 are 2 A isolated, single-channel drivers that employ Analog Devices, Inc.’siCoupler®technology to provide precision isolation. The ADuM4121/ADuM4121-1 provide 5 kV rms isolation in the wide-body, 8-lead SOIC package. Combining high speed CMOS and monolithic transformer technology, these isolation components provide outstanding performance characteristics superior to alternatives such as the combination of pulse transformers and gate drivers.The ADuM4121/ADuM4121-1 operate with an input supply ranging from 2.5 V to 6.5 V, providing compatibility with lower voltage systems. In comparison to gate drivers that employ high voltage level translation methodologies, the ADuM4121/ ADuM4121-1 offer the benefit of true, galvanic isolation between the input and the output.The ADuM4121/ADuM4121-1 include an internal Miller clamp that activates at 2 V on the falling edge of the gate drive output, supplying the driven gate with a lower impedance path to reduce the chance of Miller capacitance induced turn on.Options exists to allow the thermal shutdown to be enabled or disabled. As a result, the ADuM4121/ADuM4121-1 provide reliable control over the switching characteristics of insulated gate bipolar transistor (IGBT)/metal oxide semiconductor field, effect transistor (MOSFET) configurations over a wide range of switching voltages.APPLICATIONSSwitching power suppliesIsolated IGBT/MOSFET gate drivesIndustrial invertersGallium nitride (GaN)/silicon carbide (SiC) power devices