Discrete Semiconductor Products
PMCXB290UEZ
ActiveNexperia USA Inc.
20 V, COMPLEMENTARY N/P-CHANNEL TRENCH MOSFET
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Discrete Semiconductor Products
PMCXB290UEZ
ActiveNexperia USA Inc.
20 V, COMPLEMENTARY N/P-CHANNEL TRENCH MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | PMCXB290UEZ |
|---|---|
| Configuration | N and P-Channel Complementary |
| Current - Continuous Drain (Id) @ 25°C | 930 mA, 2.3 A, 570 mA, 3.5 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.8 nC, 0.9 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-XFDFN Exposed Pad |
| Power - Max | 280 mW, 6 W |
| Rds On (Max) @ Id, Vgs | 320 mOhm, 770 mOhm |
| Supplier Device Package | DFN1010B-6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1531 | $ 0.53 | |
Description
General part information
PMCXB290UE Series
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Documents
Technical documentation and resources