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Technical Specifications
Parameters and characteristics for this part
| Specification | SP1212-01ETG |
|---|---|
| Capacitance @ Frequency | 290 pF |
| Current - Peak Pulse (10/1000µs) | 12 A |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | SOD-882 |
| Power - Peak Pulse | 250 W |
| Power Line Protection | False |
| Qualification | AEC-Q101 |
| Supplier Device Package | SOD-882 |
| Type | Zener |
| Unidirectional Channels [custom] | 1 |
| Voltage - Breakdown (Min) [Min] | 7 V |
| Voltage - Clamping (Max) @ Ipp | 9.7 V |
| Voltage - Reverse Standoff (Typ) | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 290 | $ 0.41 | |
Description
General part information
SP1212-01ETG Series
Avalanche breakdown diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes at ±30kV (contact discharge, IEC 61000-4-2) without performance degradation. Additionally, each diode can safely dissipate 12A of 8/20μs surge current (IEC 61000-4-5 2nd edition).
Documents
Technical documentation and resources