Discrete Semiconductor Products

MDA950-20N1W

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DIODE MODULE GP 2000V 950A

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Discrete Semiconductor Products

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DIODE MODULE GP 2000V 950A

Technical Specifications

Parameters and characteristics for this part

Specification	MDA950-20N1W

Current - Average Rectified (Io) (per Diode)	950 A
Diode Configuration	1 Pair Common Anode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Module
Reverse Recovery Time (trr)	18 µs
Speed [Min]	200 mA, 500 ns
Supplier Device Package	Module
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	2000 V
Voltage - Forward (Vf) (Max) @ If	880 mV

Part	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Technology	Supplier Device Package	Speed [Min]	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Diode Configuration	Reverse Recovery Time (trr)	Mounting Type	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io) (per Diode)
LITTELFUSE MDA950-12N1W	Module	1.2 kV	880 mV	Standard	Module	200 mA 500 ns	-40 °C	150 °C	1 Pair Common Anode	18 µs	Chassis Mount	50 mA	950 A
LITTELFUSE MDA950-20N1W	Module	2000 V	880 mV	Standard	Module	200 mA 500 ns	-40 °C	150 °C	1 Pair Common Anode	18 µs	Chassis Mount		950 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

General part information

Diode Array 1 Pair Common Anode 2000 V 950A Chassis Mount Module

Technical documentation and resources

No documents available