Specification	IRF7324TRPBF

Configuration	2 P-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	63 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2940 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs [Max]	18 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

IRF732 Series

Part	Vgs(th) (Max) @ Id	Power - Max [Max]	Configuration	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Package / Case	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Mounting Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs
INFINEON IRF7325TRPBF	900 mV	2 W	2 P-Channel (Dual)	33 nC	MOSFET (Metal Oxide)	2020 pF	150 °C	-55 °C	0.154 in	8-SOIC	3.9 mm	24 mOhm	8-SO	Surface Mount	Logic Level Gate	12 V	7.8 A
INFINEON IRF7324TRPBF	1 V	2 W	2 P-Channel (Dual)	63 nC	MOSFET (Metal Oxide)		150 °C	-55 °C	0.154 in	8-SOIC	3.9 mm		8-SO	Surface Mount	Logic Level Gate	20 V	9 A	18 mOhm	2940 pF
INFINEON IRF7329PBF	900 mV	2 W	2 P-Channel (Dual)		MOSFET (Metal Oxide)		150 °C	-55 °C	0.154 in	8-SOIC	3.9 mm	17 mOhm	8-SO	Surface Mount	Logic Level Gate	12 V	9.2 A		3450 pF	57 nC
INFINEON IRF7328PBF	2.5 V	2 W	2 P-Channel (Dual)	78 nC	MOSFET (Metal Oxide)	2675 pF	150 °C	-55 °C	0.154 in	8-SOIC	3.9 mm	21 mOhm	8-SO	Surface Mount	Logic Level Gate	30 V	8 A
INFINEON IRF7325PBF	900 mV	2 W	2 P-Channel (Dual)	33 nC	MOSFET (Metal Oxide)	2020 pF	150 °C	-55 °C	0.154 in	8-SOIC	3.9 mm	24 mOhm	8-SO	Surface Mount	Logic Level Gate	12 V	7.8 A
INFINEON IRF7329TR	900 mV	2 W	2 P-Channel (Dual)		MOSFET (Metal Oxide)		150 °C	-55 °C	0.154 in	8-SOIC	3.9 mm	17 mOhm	8-SO	Surface Mount	Logic Level Gate	12 V	9.2 A		3450 pF	57 nC
INFINEON IRF7328TR	2.5 V	2 W	2 P-Channel (Dual)	78 nC	MOSFET (Metal Oxide)	2675 pF	150 °C	-55 °C	0.154 in	8-SOIC	3.9 mm	21 mOhm	8-SO	Surface Mount	Logic Level Gate	30 V	8 A
INFINEON IRF7328TRPBF	2.5 V	2 W	2 P-Channel (Dual)	78 nC	MOSFET (Metal Oxide)	2675 pF	150 °C	-55 °C	0.154 in	8-SOIC	3.9 mm	21 mOhm	8-SO	Surface Mount	Logic Level Gate	30 V	8 A
INFINEON IRF7324PBF	1 V	2 W	2 P-Channel (Dual)	63 nC	MOSFET (Metal Oxide)		150 °C	-55 °C	0.154 in	8-SOIC	3.9 mm		8-SO	Surface Mount	Logic Level Gate	20 V	9 A	18 mOhm	2940 pF
INFINEON IRF7324	1 V	2 W	2 P-Channel (Dual)	63 nC	MOSFET (Metal Oxide)		150 °C	-55 °C	0.154 in	8-SOIC	3.9 mm		8-SO	Surface Mount	Logic Level Gate	20 V	9 A	18 mOhm	2940 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.47
		10	$ 1.20
		100	$ 0.94
		500	$ 0.79
		1000	$ 0.65
		2000	$ 0.61
	Digi-Reel®	1	$ 1.47
		10	$ 1.20
		100	$ 0.94
		500	$ 0.79
		1000	$ 0.65
		2000	$ 0.61
	N/A	6351	$ 1.77
	Tape & Reel (TR)	4000	$ 0.61
		8000	$ 0.58
		12000	$ 0.55

Description

General part information

IRF732 Series

IRF7324TRPBF is a HEXFET® power MOSFET. This from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.

Documents

Technical documentation and resources

IRF7324TRPBF

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IRF7324TRPBF

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Technical Specifications

IRF732 Series

Pricing

Description

IRF732 Series

Documents

MOSFET some key facts about avalanche

FIT Report - IRF7324

IRF7324

Data Sheet - IRF7324

Small Signal and Small Power MOSFETs selection guide

Application Note EN

IR Part Numbering System

IRF732 Series