IPT60R028G7XTMA1
ActiveCOOLMOS™ G7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TOLL HSOF-8 PACKAGE; 28 MOHM; HIGHEST PERFORMANCE
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IPT60R028G7XTMA1
ActiveCOOLMOS™ G7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TOLL HSOF-8 PACKAGE; 28 MOHM; HIGHEST PERFORMANCE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPT60R028G7XTMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 75 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 123 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 4820 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerSFN |
| Power Dissipation (Max) | 391 W |
| Rds On (Max) @ Id, Vgs | 28 mOhm |
| Supplier Device Package | PG-HSOF-8-2 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
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Description
General part information
IPT60R028 Series
600V CoolMOS™ G7 power transistor. The C7 GOLD series (G7) for the first time brings together the benefits of the C7 GOLD CoolMOS™ technology, 4 pin Kelvin source capability and the improved thermal properties of the TOLL package to enable a possible SMD solution for high current topologies such as PFC up to 3KW. Suitable for use in PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. computing, server, telecom, UPS and solar.
Documents
Technical documentation and resources