Specification	IPP16CN10NGXKSA1

Current - Continuous Drain (Id) @ 25°C	53 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	48 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3220 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	100 W
Rds On (Max) @ Id, Vgs	16.5 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

OptiMOS 2 Series

Part	Package / Case	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max)	Vgs(th) (Max) @ Id
INFINEON IPP16CN10NGXKSA1	TO-220-3	100 V	53 A	10 V	48 nC	N-Channel	Through Hole	3220 pF	100 W	MOSFET (Metal Oxide)	175 °C	-55 °C	16.5 mOhm	PG-TO220-3	20 V	4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.94
Mouser	N/A	1	$ 2.03
		10	$ 1.40
		100	$ 1.12
		500	$ 0.93
		1000	$ 0.80
		2500	$ 0.76
		5000	$ 0.75

Description

General part information

OptiMOS 2 Series

Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on)and FOM (figure of merit).

Documents

Technical documentation and resources

IPP16CN10NGXKSA1 | Datasheet

Datasheet

MOSFET OptiMOS™ datasheet explanation (PDF)

Application Notes