Discrete Semiconductor Products

FF8MR12W1M1HB11BPSA1

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SILICON CARBIDE MOSFET, HALF BRIDGE, N CHANNEL, 90 A, 1.2 KV, 0.0081 OHM, MODULE

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Discrete Semiconductor Products

Active

SILICON CARBIDE MOSFET, HALF BRIDGE, N CHANNEL, 90 A, 1.2 KV, 0.0081 OHM, MODULE

Technical Specifications

Parameters and characteristics for this part

Part	Mounting Type	Package / Case	Technology	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C
INFINEON FF8MR12W2M1PB11BPSA1
INFINEON FF8MR12W1M1HB11BPSA1	Chassis Mount	Module	Silicon Carbide (SiC)	1.2 kV	1200 V	AG-EASY1B
INFINEON FF8MR12W2M1B11BOMA1	Chassis Mount	Module	Silicon Carbide (SiC)	1.2 kV	1200 V	AG-EASY2BM-2	-40 °C	150 °C	2 N-Channel (Dual)	11000 pF	5.55 V	150 A

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General part information

EasyDUAL™ 1BCoolSiC™ MOSFEThalf-bridge module 1200 V, 8 mΩ G1 with integrated NTC temperature sensor andPressFIT Contact Technology.

Technical documentation and resources