Discrete Semiconductor Products

SUM40N10-30-E3

Obsolete

MOSFET N-CH 100V 40A TO263

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 40A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SUM40N10-30-E3

Current - Continuous Drain (Id) (Tc)	40 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	60 nC
Input Capacitance (Ciss) (Max)	2400 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263 (D2PAK)
Power Dissipation (Max)	3.75 W, 107 W
Rds On (Max)	30 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

Part	Mounting Type	Vgs(th) (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max)	FET Type	Current - Continuous Drain (Id) (Tc)	Package / Case	Gate Charge (Max)	Package Name	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)	Rds On (Max)
Vishay Dale SUM40N10-30-E3	Surface Mount	4 V	6 V	10 V	-55 °C	175 °C	20 V	2400 pF	N-Channel	40 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	60 nC	TO-263 (D2PAK)	100 V	MOSFET (Metal Oxide)	3.75 W 107 W	30 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 100 V 40A (Tc) 3.75W (Ta), 107W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources

No documents available