Deep-Dive with AI
Search across all available documentation for this part.
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | LSIC1MO120G0080 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 39 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 92 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-4 |
| Power Dissipation (Max) [Max] | 214 W |
| Rds On (Max) @ Id, Vgs | 100 mOhm |
| Supplier Device Package | TO-247-4L |
| Vgs (Max) [Max] | 22 V, -6 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.00 | 1m+ |
Description
General part information
LSIC1MO120G0080 Series
Littelfuse SiC MOSFETs are available in 14A, 18A, 25A, 50A and 70A nominal current rating. They are available in TO-247-4L package with a Kelvin source connection. Not only does the pin arrangement simplify the PCB routing, but the Kelvin source connection also reduces the stray inductance in the gate drive circuit. This in turn leads to improvement in efficiency, EMI behavior, and switching performance. The MOSFETs exhibit superior gate oxide reliability and are optimized for switching performance.
Documents
Technical documentation and resources