Discrete Semiconductor Products

SIC20120PTP-BP

Obsolete

DIODE SIL CARB 1200V 20A TO2472L

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE SIL CARB 1200V 20A TO2472L

Technical Specifications

Parameters and characteristics for this part

Specification	SIC20120PTP-BP

Capacitance @ Vr, F	1190 pF
Current - Reverse Leakage @ Vr	60 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-247-2L
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Package / Case	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Mounting Type	Current - Average Rectified (Io)
MCC (Micro Commercial Components) SIC20120PTP-BP	TO-247-2	0 ns	1.8 V	60 µA	1190 pF	1.2 kV	500 mA	TO-247-2L	175 ░C	-55 °C	SiC (Silicon Carbide) Schottky	Through Hole
MCC (Micro Commercial Components) SIC20120PTA-BP	TO-247-3		1.8 V	2 µA	750 pF	1.2 kV	500 mA	TO-247-3	175 ░C	-55 °C	SiC (Silicon Carbide) Schottky	Through Hole	10 A
MCC (Micro Commercial Components) SIC20120PTP-BP	TO-247-2	0 ns	1.8 V	60 µA	1190 pF	1.2 kV	500 mA	TO-247-2L	175 ░C	-55 °C	SiC (Silicon Carbide) Schottky	Through Hole
MCC (Micro Commercial Components) SIC20120PTA-BP	TO-247-3	0 ns	1.8 V	2 µA	750 pF	1.2 kV	500 mA	TO-247-3	175 ░C	-55 °C	SiC (Silicon Carbide) Schottky	Through Hole	10 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 20A Through Hole TO-247-2L

Technical documentation and resources