Discrete Semiconductor Products

BSC034N10LS5ATMA1

Active

INFINEON

INFINEON OPTIMOS™ 5 POWER MOSFETS IN LOGIC LEVEL FEATURE LOW RDS(ON) AND SMALL FORM FACTOR

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

Discrete Semiconductor Products

BSC034N10LS5ATMA1

Active

INFINEON

INFINEON OPTIMOS™ 5 POWER MOSFETS IN LOGIC LEVEL FEATURE LOW RDS(ON) AND SMALL FORM FACTOR

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BSC034N10LS5ATMA1

Current - Continuous Drain (Id) @ 25°C	100 A, 19 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	46 nC
Input Capacitance (Ciss) (Max) @ Vds	6500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	156 W, 2.5 W
Rds On (Max) @ Id, Vgs	3.4 mOhm
Supplier Device Package	PG-TDSON-8-7
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

BSC034 Series

Part	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	FET Type	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Supplier Device Package	Power Dissipation (Max)	Power Dissipation (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
INFINEON BSC034N06NSATMA1	41 nC	6 V 10 V	3000 pF	3.4 mOhm	N-Channel	MOSFET (Metal Oxide)	60 V	150 °C	-55 °C	Surface Mount	3.3 V	100 A	20 V	PG-TDSON-8-7	2.5 W	74 W	8-PowerTDFN
INFINEON BSC034N03LSGATMA1		4.5 V 10 V	4300 pF	3.4 mOhm	N-Channel	MOSFET (Metal Oxide)	30 V	150 °C	-55 °C	Surface Mount	2.2 V		20 V	PG-TDSON-8-5			8-PowerTDFN	100 A	22 A	2.5 W 57 W	52 nC
INFINEON BSC034N10LS5ATMA1		4.5 V 10 V		3.4 mOhm	N-Channel	MOSFET (Metal Oxide)	100 V	150 °C	-55 °C	Surface Mount	2.3 V	19 A 100 A	20 V	PG-TDSON-8-7			8-PowerTDFN			2.5 W 156 W	46 nC	6500 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.94
		10	$ 2.62
		25	$ 2.36
		100	$ 2.15
		250	$ 1.94
		500	$ 1.74
		1000	$ 1.47
	Digi-Reel®	1	$ 2.94
		10	$ 2.62
		25	$ 2.36
		100	$ 2.15
		250	$ 1.94
		500	$ 1.74
		1000	$ 1.47
	N/A	18633	$ 2.45
	Tape & Reel (TR)	5000	$ 1.34

Description

General part information

BSC034 Series

OptiMOS™ 5 power MOSFETsin logic level are highly suitable forcharging,adapterandtelecomapplications. The device's low gate charge reduces switching losses without compromising conduction losses. Logic level MOSFETs allow operations at high switching frequencies and due to a low gate threshold voltage can be driven directly from microcontrollers.

Documents

Technical documentation and resources