Discrete Semiconductor Products

SQJA06EP-T1_GE3

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MOSFET N-CH 60V 57A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 60V 57A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJA06EP-T1_GE3

Current - Continuous Drain (Id) @ 25°C	57 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max) [Max]	55 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	8.7 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Qualification	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Package / Case
Vishay General Semiconductor - Diodes Division SQJA06EP-T1_GE3	10 V	3.5 V	MOSFET (Metal Oxide)	Surface Mount	-55 °C	175 ░C	Automotive	60 V	PowerPAK® SO-8	57 A	AEC-Q101	55 W	8.7 mOhm	2800 pF	20 V	45 nC	N-Channel	PowerPAK® SO-8

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General part information

N-Channel 60 V 57A (Tc) 55W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources

No documents available