Discrete Semiconductor Products

D1961SH45TXPSA1

Active

DIODE GEN PURP 4.5KV 2380A

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DIODE GEN PURP 4.5KV 2380A

Technical Specifications

Parameters and characteristics for this part

Specification	D1961SH45TXPSA1

Current - Average Rectified (Io)	2380 A
Current - Reverse Leakage @ Vr	150 mA
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	140 °C
Operating Temperature - Junction [Min]	0 °C
Package / Case	DO-200AE
Speed [Min]	200 mA, 500 ns
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	4500 V
Voltage - Forward (Vf) (Max) @ If	2.5 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed [Min]	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Technology	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Mounting Type
INFINEON D1961SH45TXPSA1	140 °C	0 °C	200 mA 500 ns	2380 A	150 mA	Standard	2.5 V	4500 V	DO-200AE	Chassis Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 4500 V 2380A Chassis Mount

Technical documentation and resources