Discrete Semiconductor Products

MCP90N12A-BP

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N-CHANNEL MOSFET,TO-220

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Discrete Semiconductor Products

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N-CHANNEL MOSFET,TO-220

Technical Specifications

Parameters and characteristics for this part

Specification	MCP90N12A-BP

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	120 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	72 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	166 W
Rds On (Max) @ Id, Vgs	9 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Package / Case	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]
MCC (Micro Commercial Components) MCP90N12A-BP	20 V	72 nC	4600 pF	166 W	4.5 V 10 V	90 A	Through Hole	9 mOhm	3 V	120 V	MOSFET (Metal Oxide)	150 °C	-55 °C	N-Channel	TO-220-3	TO-220AB
MCC (Micro Commercial Components) MCP90N06Y-BP	20 V		2000 pF	83 W	4.5 V 10 V	90 A	Through Hole	7.5 mOhm	2.5 V	60 V	MOSFET (Metal Oxide)	150 °C	-55 °C	N-Channel	TO-220-3	TO-220AB (H)	34 nC
MCC (Micro Commercial Components) MCP90N12A-BP	20 V	72 nC	4600 pF	166 W	4.5 V 10 V	90 A	Through Hole	9 mOhm	3 V	120 V	MOSFET (Metal Oxide)	150 °C	-55 °C	N-Channel	TO-220-3	TO-220AB
MCC (Micro Commercial Components) MCP90N06Y-BP	20 V		2000 pF	83 W	4.5 V 10 V	90 A	Through Hole	7.5 mOhm	2.5 V	60 V	MOSFET (Metal Oxide)	150 °C	-55 °C	N-Channel	TO-220-3	TO-220AB (H)	34 nC

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General part information

N-Channel 120 V 90A (Tc) 166W Through Hole TO-220AB

Technical documentation and resources