Discrete Semiconductor Products

SPP02N60C3HKSA1

Obsolete

MOSFET N-CH 650V 1.8A TO220-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 650V 1.8A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPP02N60C3HKSA1

Current - Continuous Drain (Id) @ 25°C	1.8 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12.5 nC
Input Capacitance (Ciss) (Max) @ Vds	200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	3 Ohm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs
INFINEON SPP02N60C3HKSA1	MOSFET (Metal Oxide)	1.8 A	20 V	TO-220-3	10 V	650 V	Through Hole	12.5 nC	3.9 V	PG-TO220-3-1	150 °C	-55 °C	N-Channel	200 pF	25 W	3 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.56

General part information

N-Channel 650 V 1.8A (Tc) 25W (Tc) Through Hole PG-TO220-3-1

Technical documentation and resources