Discrete Semiconductor Products

SIHP10N40D-E3

LTB

MOSFET N-CH 400V 10A TO220AB

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Discrete Semiconductor Products

LTB

MOSFET N-CH 400V 10A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SIHP10N40D-E3

Current - Continuous Drain (Id) (Tc)	10 A
Drain to Source Voltage (Vdss)	400 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	30 nC
Input Capacitance (Ciss) (Max)	526 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	147 W
Rds On (Max)	600 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

Part	Current - Continuous Drain (Id) (Tc)	Package Name	Input Capacitance (Ciss) (Max)	Rds On (Max)	Technology	Vgs(th) (Max)	Gate Charge (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Package / Case	FET Type	Power Dissipation (Max)
Vishay Dale SIHP10N40D-GE3	10 A	TO-220AB	526 pF	600 mOhm	MOSFET (Metal Oxide)	5 V	30 nC	30 V	10 V	400 V	-55 °C	150 °C	Through Hole	TO-220-3	N-Channel	147 W
Vishay Dale SIHP10N40D-E3	10 A	TO-220AB	526 pF	600 mOhm	MOSFET (Metal Oxide)	5 V	30 nC	30 V	10 V	400 V	-55 °C	150 °C	Through Hole	TO-220-3	N-Channel	147 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.82	1m+
	Tube	1000	$ 0.81	1m+

3D models and CAD resources for this part

General part information

N-Channel 400 V 10A (Tc) 147W (Tc) Through Hole TO-220AB

Technical documentation and resources