Discrete Semiconductor Products

VQ3001P-E3

Obsolete

MOSFET 2N/2P-CH 30V 0.85A

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Discrete Semiconductor Products

Obsolete

MOSFET 2N/2P-CH 30V 0.85A

Technical Specifications

Parameters and characteristics for this part

Specification	VQ3001P-E3

Channel Count	2
Configuration	2 P-Channel, 2 N, N, P-Channel
Current - Continuous Drain (Id) (Maximum)	600 mA
Current - Continuous Drain (Id) (Typical)	850 mA
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max)	150 pF, 110 pF
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Power - Max	2 VA
Rds On (Max)	1 Ohm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.5 V

Part	Power - Max	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Rds On (Max)	Current - Continuous Drain (Id) (Maximum)	Current - Continuous Drain (Id) (Typical)	Input Capacitance (Ciss) (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Configuration	Channel Count
Vishay Dale VQ3001P-E3	2 VA	2.5 V	30 V	1 Ohm	600 mA	850 mA	110 pF 150 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	2 N 2 P-Channel N P-Channel	2

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 98.75	1m+

3D models and CAD resources for this part

General part information

Mosfet Array 30V 850mA, 600mA 2W

Technical documentation and resources

No documents available