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BSP33,115
Discrete Semiconductor Products

BSP33,115

Obsolete
Nexperia USA Inc.

80 V, 1 A PNP MEDIUM POWER TRANSISTOR

BSP33,115
Discrete Semiconductor Products

BSP33,115

Obsolete
Nexperia USA Inc.

80 V, 1 A PNP MEDIUM POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationBSP33,115
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Frequency - Transition100 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-261AA, TO-261-4
Power - Max [Max]1.3 W
QualificationAEC-Q100
Supplier Device PackageSOT-223
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1626$ 1.03

Description

General part information

BSP33 Series

PNP medium power transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. NPN complements: BSP41 and BSP43.