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MCG53N06AHE3-TP
Discrete Semiconductor Products

MCG53N06AHE3-TP

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MCG53N06AHE3-TP
Discrete Semiconductor Products

MCG53N06AHE3-TP

Active

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMCG53N06AHE3-TP
Current - Continuous Drain (Id) @ 25°C53 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs31 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1850 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 C
Package / Case8-VDFN Exposed Pad
Power Dissipation (Max) [Max]45 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs8.2 mOhm
Supplier Device PackageDFN3333
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 5000$ 0.33
5000$ 0.33
N/A 0$ 0.33
0$ 0.33

Description

General part information

MCG53N06 Series

N-Channel 60 V 53A 45W Surface Mount DFN3333

Documents

Technical documentation and resources