Specification	PBHV2160ZX

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	650 mW
Supplier Device Package	SOT-223
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	125 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

PBHV2160Z Series

600 V, 0.1 A NPN high-voltage low VCEsat transistor

Part	Mounting Type	Operating Temperature	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Package / Case	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Nexperia USA Inc. PBHV2160ZX	Surface Mount	150 °C	650 mW	600 V	SOT-223	TO-261-4 TO-261AA	100 nA	100 mA	125 mV	NPN	70

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.03

General part information

NPN high-voltage low VCEsattransistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.

Technical documentation and resources