KSR1004BU

Obsolete

TRANS PREBIAS NPN 50V TO92-3

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Discrete Semiconductor Products

Obsolete

TRANS PREBIAS NPN 50V TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	KSR1004BU

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	68
Frequency - Transition	250 MHz
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3
Resistor - Base (R1)	47 kOhms
Resistor - Emitter Base (R2)	47000 Ohms
Resistors Included	R1 and R2
Supplier Device Package	TO-92-3
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Package / Case	Resistor - Base (R1)	Vce Saturation (Max) @ Ib, Ic	Resistors Included	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Resistor - Emitter Base (R2)	Supplier Device Package	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type
ON Semiconductor KSR1004BU	TO-226-3 TO-92-3	47 kOhms	300 mV	R1 and R2	100 mA	50 V	Through Hole	100 nA	47000 Ohms	TO-92-3	250 MHz	68	NPN - Pre-Biased

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	3643	$ 0.08

General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 300 mW Through Hole TO-92-3

Technical documentation and resources

No documents available