BUK7M27-80EX

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MOSFET N-CH 80V 30A LFPAK33

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Discrete Semiconductor Products

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MOSFET N-CH 80V 30A LFPAK33

Technical Specifications

Parameters and characteristics for this part

Specification	BUK7M27-80EX

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1306 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max) [Max]	62 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	27 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Rds On (Max) @ Id, Vgs	Grade	Technology	Vgs (Max)	Mounting Type	Power Dissipation (Max) [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)
Freescale Semiconductor - NXP BUK7M27-80EX	N-Channel	10 V	-55 °C	175 ░C	1306 pF	AEC-Q101	27 mOhm	Automotive	MOSFET (Metal Oxide)	20 V	Surface Mount	62 W	LFPAK33	19.5 nC	30 A	80 V

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General part information

N-Channel 80 V 30A (Tc) 62W (Tc) Surface Mount LFPAK33

Technical documentation and resources