Discrete Semiconductor Products

EMH10-TP

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SMALL SIGNAL BIPOLAR TRANSISTOR,

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Discrete Semiconductor Products

Active

SMALL SIGNAL BIPOLAR TRANSISTOR,

Technical Specifications

Parameters and characteristics for this part

Specification	EMH10-TP

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-666, SOT-563
Resistor - Base (R1)	2.2 kOhm
Supplier Device Package	SOT-563
Transistor Type	2 NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Package / Case	Frequency - Transition	Transistor Type	Resistor - Base (R1)	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Micro Commercial Components EMH10-TP	300 mV	Surface Mount	SOT-563	100 mA	SOT-563 SOT-666	250 MHz	2 NPN - Pre-Biased	2.2 kOhm	500 nA	50 V	80

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	3000	$ 0.11

General part information

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount SOT-563

Technical documentation and resources