Discrete Semiconductor Products

SI1403BDL-T1-GE3

LTB

MOSFET P-CH 20V 1.5A SC70-6

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Discrete Semiconductor Products

LTB

MOSFET P-CH 20V 1.5A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SI1403BDL-T1-GE3

Current - Continuous Drain (Id) @ 25°C	1.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power Dissipation (Max) [Max]	625 mW
Rds On (Max) @ Id, Vgs	150 mOhm
Supplier Device Package	SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.3 V

Part	Package / Case	Power Dissipation (Max) [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	FET Type	Mounting Type	Technology	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division SI1403BDL-T1-GE3	6-TSSOP SC-88 SOT-363	625 mW	SC-70-6	-55 °C	150 °C	12 V	1.5 A	20 V	1.3 V	P-Channel	Surface Mount	MOSFET (Metal Oxide)	150 mOhm	2.5 V 4.5 V

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General part information

P-Channel 20 V 1.5A (Ta) 625mW (Ta) Surface Mount SC-70-6

Technical documentation and resources