Discrete Semiconductor Products

SI1401EDH-T1-BE3

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MOSFET P-CH 12V 4A/4A SC70-6

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Discrete Semiconductor Products

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MOSFET P-CH 12V 4A/4A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SI1401EDH-T1-BE3

Current - Continuous Drain (Id) @ 25°C	4 A, 4 A
Drain to Source Voltage (Vdss)	12 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power Dissipation (Max)	1.6 W, 2.8 W
Rds On (Max) @ Id, Vgs	34 mOhm
Supplier Device Package	SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	Vgs(th) (Max) @ Id	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division SI1401EDH-T1-BE3	12 V	SC-70-6	MOSFET (Metal Oxide)	1 V	P-Channel	4 A 4 A	1.6 W 2.8 W	34 mOhm	6-TSSOP SC-88 SOT-363	Surface Mount	-55 °C	150 °C	36 nC	10 V
Vishay General Semiconductor - Diodes Division SI1401EDH-T1-GE3	12 V	SC-70-6	MOSFET (Metal Oxide)	1 V	P-Channel	4 A	1.6 W 2.8 W	34 mOhm	6-TSSOP SC-88 SOT-363	Surface Mount	-55 °C	150 °C	36 nC	10 V	1.5 V 4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 12 V 4A (Ta), 4A (Tc) 1.6W (Ta), 2.8W (Tc) Surface Mount SC-70-6

Technical documentation and resources