Discrete Semiconductor Products

UPA2717GR-E1-AT

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SWITCHING N-CHANNEL POWER MOSFET

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Discrete Semiconductor Products

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SWITCHING N-CHANNEL POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2717GR-E1-AT

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	130 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerSOIC (0.173", 4.40mm Width)
Power Dissipation (Max)	2 W
Rds On (Max) @ Id, Vgs	5.5 mOhm
Supplier Device Package	8-PowerSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Switching N-Channel Power MOSFET

Part	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Vgs (Max)	Technology	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type
Renesas Electronics Corporation UPA2717GR-E1-AT	4 V	10 V	30 V	2.5 V	2 W	20 V	MOSFET (Metal Oxide)	8-PowerSOIC (0.173" 4.40mm Width)	15 A	150 °C	8-PowerSOP	130 nC	Surface Mount	5.5 mOhm	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	7081	$ 1.90

General part information

The UPA2717GR is a Switching N-Channel Power MOSFET.

Technical documentation and resources