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Discrete Semiconductor Products
NXH80T120L2Q0S2G
ActiveON Semiconductor
IGBT MODULE, PIM HALF BRIDGE INVERTER, 67 A, 2.05 V, 158 MW, 150 °C
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Discrete Semiconductor Products
NXH80T120L2Q0S2G
ActiveON Semiconductor
IGBT MODULE, PIM HALF BRIDGE INVERTER, 67 A, 2.05 V, 158 MW, 150 °C
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NXH80T120L2Q0S2G |
|---|---|
| Configuration | Three Level Inverter |
| Current - Collector (Ic) (Max) [Max] | 67 A |
| Current - Collector Cutoff (Max) [Max] | 300 µA |
| IGBT Type | Trench Field Stop |
| Input | Standard |
| Input Capacitance (Cies) @ Vce | 19400 pF |
| Mounting Type | Chassis Mount |
| NTC Thermistor | True |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | Module |
| Power - Max [Max] | 158 W |
| Supplier Device Package | 20-PIM/Q0PACK |
| Supplier Device Package [x] | 55 |
| Supplier Device Package [y] | 32.5 |
| Vce(on) (Max) @ Vge, Ic | 2.85 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
NXH80T Series
IGBT Module Trench Field Stop Three Level Inverter 1200 V 67 A 158 W Chassis Mount 20-PIM/Q0PACK (55x32.5)
Documents
Technical documentation and resources