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Discrete Semiconductor Products

NXH80T120L2Q0S2G

Active
ON Semiconductor

IGBT MODULE, PIM HALF BRIDGE INVERTER, 67 A, 2.05 V, 158 MW, 150 °C

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Discrete Semiconductor Products

NXH80T120L2Q0S2G

Active
ON Semiconductor

IGBT MODULE, PIM HALF BRIDGE INVERTER, 67 A, 2.05 V, 158 MW, 150 °C

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNXH80T120L2Q0S2G
ConfigurationThree Level Inverter
Current - Collector (Ic) (Max) [Max]67 A
Current - Collector Cutoff (Max) [Max]300 µA
IGBT TypeTrench Field Stop
InputStandard
Input Capacitance (Cies) @ Vce19400 pF
Mounting TypeChassis Mount
NTC ThermistorTrue
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseModule
Power - Max [Max]158 W
Supplier Device Package20-PIM/Q0PACK
Supplier Device Package [x]55
Supplier Device Package [y]32.5
Vce(on) (Max) @ Vge, Ic2.85 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 24$ 60.79
NewarkEach 10$ 59.36
25$ 58.53
50$ 57.70
100$ 54.38

Description

General part information

NXH80T Series

IGBT Module Trench Field Stop Three Level Inverter 1200 V 67 A 158 W Chassis Mount 20-PIM/Q0PACK (55x32.5)