Discrete Semiconductor Products

SUP28N15-52-E3

Obsolete

MOSFET N-CH 150V 28A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 150V 28A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SUP28N15-52-E3

Current - Continuous Drain (Id) (Tc)	28 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	40 nC
Input Capacitance (Ciss) (Max)	1725 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	3.75 W, 120 W
Rds On (Max)	52 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

Part	Vgs (Max)	FET Type	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Rds On (Max)	Gate Charge (Max)	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Technology	Mounting Type	Package / Case	Vgs(th) (Max)
Vishay Dale SUP28N15-52-E3	20 V	N-Channel	28 A	6 V	10 V	1725 pF	150 V	52 mOhm	40 nC	3.75 W 120 W	-55 °C	175 °C	TO-220AB	MOSFET (Metal Oxide)	Through Hole	TO-220-3	4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 150 V 28A (Tc) 3.75W (Ta), 120W (Tc) Through Hole TO-220AB

Technical documentation and resources