Discrete Semiconductor Products

PEMB20,115

NRND

TRANS PREBIAS 2PNP 50V SOT666

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Discrete Semiconductor Products

NRND

TRANS PREBIAS 2PNP 50V SOT666

Technical Specifications

Parameters and characteristics for this part

Specification	PEMB20,115

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30
Mounting Type	Surface Mount
Package / Case	SOT-666, SOT-563
Power - Max [Max]	300 mW
Resistor - Base (R1)	2.2 kOhm
Resistor - Emitter Base (R2)	2.2 kOhms
Supplier Device Package	SOT-666
Transistor Type	2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	150 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Resistor - Emitter Base (R2)	Resistor - Base (R1)	Transistor Type	Current - Collector Cutoff (Max) [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case
Freescale Semiconductor - NXP PEMB20,115	2.2 kOhms	2.2 kOhm	2 PNP - Pre-Biased (Dual)	1 µA	Surface Mount	30	100 mA	150 mV	SOT-666	300 mW	50 V	SOT-563 SOT-666

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666

Technical documentation and resources