Discrete Semiconductor Products

SI9433BDY-T1-GE3

LTB

MOSFET P-CH 20V 4.5A 8SO

Search across all available documentation for this part.

Discrete Semiconductor Products

LTB

MOSFET P-CH 20V 4.5A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI9433BDY-T1-GE3

Current - Continuous Drain (Id) (Ta)	4.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.7 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	14 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	1.3 W
Rds On (Max)	40 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.5 V

Part	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Package Name	Vgs(th) (Max)	FET Type	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)	Package Length	Package Width	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Current - Continuous Drain (Id) (Ta)	Gate Charge (Max)	Rds On (Max)	Mounting Type
Vishay Dale SI9433BDY-T1-GE3	2.7 V	4.5 V	8-SOIC	1.5 V	P-Channel	1.3 W	MOSFET (Metal Oxide)	20 V	0.154 in	3.9 mm	-55 °C	150 °C	12 V	4.5 A	14 nC	40 mOhm	Surface Mount
Vishay Dale SI9433BDY-T1-E3	2.7 V	4.5 V	8-SOIC	1.5 V	P-Channel	1.3 W	MOSFET (Metal Oxide)	20 V	0.154 in	3.9 mm	-55 °C	150 °C	12 V	4.5 A	14 nC	40 mOhm	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

P-Channel 20 V 4.5A (Ta) 1.3W (Ta) Surface Mount 8-SOIC

Technical documentation and resources