Discrete Semiconductor Products

PSMN018-80YS,115

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MOSFET N-CH 80V 45A LFPAK56

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Discrete Semiconductor Products

Active

MOSFET N-CH 80V 45A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN018-80YS,115

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	26 nC
Input Capacitance (Ciss) (Max) @ Vds	1640 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Rds On (Max) @ Id, Vgs	18 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type
Freescale Semiconductor - NXP PSMN018-80YS,115	N-Channel	45 A	MOSFET (Metal Oxide)	10 V	SC-100 SOT-669	1640 pF	20 V	18 mOhm	-55 °C	175 ░C	LFPAK56 Power-SO8	80 V	26 nC	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 80 V 45A (Tc) 89W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources