Discrete Semiconductor Products
SISA16DN-T1-GE3
ActiveVishay General Semiconductor - Diodes Division
MOSFET N-CH 30V 16A PPAK1212-8
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Discrete Semiconductor Products
SISA16DN-T1-GE3
ActiveVishay General Semiconductor - Diodes Division
MOSFET N-CH 30V 16A PPAK1212-8
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SISA16DN-T1-GE3 |
|---|---|
| Drain to Source Voltage (Vdss) | 30 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 2060 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | PowerPAK® 1212-8 |
| Rds On (Max) @ Id, Vgs | 6.8 mOhm |
| Supplier Device Package | PowerPAK® 1212-8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.58 | |
| Digi-Reel® | 1 | $ 0.58 | ||
| Tape & Reel (TR) | 6000 | $ 0.19 | ||
| 9000 | $ 0.17 | |||
| 30000 | $ 0.17 | |||
Description
General part information
SISA16 Series
N-Channel 30 V 16A (Ta) Surface Mount PowerPAK® 1212-8
Documents
Technical documentation and resources
No documents available